2SJ210 H16 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
-200mA/-0.2A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance |
6Ω @-10mA,-10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
-1.4--2.4V |
耗散功率Pd
Power Dissipation |
200mW/0.2W |
Description & Applications |
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
描述与应用 |
MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |
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